Invention Grant
- Patent Title: Optoelectronic semiconductor component and method for fabricating an optoelectronic semiconductor component
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Application No.: US15533025Application Date: 2015-12-02
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Publication No.: US10586827B2Publication Date: 2020-03-10
- Inventor: Britta Göötz , Walter Wegleiter , Stefan Grötsch
- Applicant: OSRAM OLED GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
- Current Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
- Current Assignee Address: DE Regensburg
- Agency: Slater Matsil, LLP
- Priority: DE102014117902 20141204; DE102015103055 20150303
- International Application: PCT/EP2015/078403 WO 20151202
- International Announcement: WO2016/087542 WO 20160609
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L33/50 ; H01L33/60 ; H01L33/08 ; H01L33/38 ; H01L25/16

Abstract:
An optoelectronic semiconductor component is specified that has a semiconductor chip having a main side, the main side comprising a plurality of emission fields that are arranged next to one another. The emission fields are individually and independently actuatable and, during operation, they are each used to couple radiation out of the semiconductor chip. The main side has reflective partitions mounted on it that are arranged between adjacent emission fields and at least partially surround the emission fields in a plan view of the main side. In addition, the main side has a conversion element mounted on it, having an underside, which faces the semiconductor chip, and an averted top. The partitions are formed from a different material from the semiconductor material of the semiconductor chip and jut out from the semiconductor chip in a direction away from the main side. The conversion element covers at least one emission field at least partially and is connected to said emission field in a mechanically robust fashion. The underside of the conversion element in the region of the covered emission field juts out from the partitions in a direction away from the main side by no more than 10% of the height of the partitions.
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Information query
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