Invention Grant
- Patent Title: Charged particle beam irradiation apparatus and device manufacturing method
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Application No.: US15574280Application Date: 2016-06-07
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Publication No.: US10593514B2Publication Date: 2020-03-17
- Inventor: Yuichi Shibazaki
- Applicant: NIKON CORPORATION
- Applicant Address: JP Tokyo
- Assignee: NIKON CORPORATION
- Current Assignee: NIKON CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2015-116160 20150608; JP2015-116161 20150608
- International Application: PCT/JP2016/066825 WO 20160607
- International Announcement: WO2016/199738 WO 20161215
- Main IPC: H01J37/30
- IPC: H01J37/30 ; H01L21/027 ; H01L21/68 ; H01L21/687 ; H01L21/768 ; H01J37/305 ; G03F7/20

Abstract:
An electron beam irradiation apparatus which exposes a wafer coated with an electron beam resist with an electron beam is equipped with: a stage that can be moved holding the wafer; an electron beam optical system that irradiates the wafer with an electron beam; and, an opening member, placed facing the wafer via a predetermined gap on the wafer side in the optical arrangement direction of the electron beam optical system, and having an opening through which the electron beam from the electron beam optical system passes.
Public/Granted literature
- US20180138011A1 CHARGED PARTICLE BEAM EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD Public/Granted day:2018-05-17
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