Invention Grant
- Patent Title: Semiconductor devices with back surface isolation
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Application No.: US16388458Application Date: 2019-04-18
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Publication No.: US10600674B2Publication Date: 2020-03-24
- Inventor: Alexander Lidow , Jianjun Cao , Robert Beach , Johan T. Strydom , Alana Nakata , Guangyuan Zhao
- Applicant: Efficient Power Conversion Corporation
- Applicant Address: US CA El Segundo
- Assignee: Efficient Power Conversion Corporation
- Current Assignee: Efficient Power Conversion Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Blank Rome LLP
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L29/732 ; H01L29/778 ; H01L27/06 ; H01L27/085 ; H01L29/10 ; H01L29/417 ; H01L29/78 ; H01L29/88 ; H01L21/74 ; H01L21/761 ; H01L21/762 ; H01L21/8252 ; H01L21/8258 ; H01L23/535
Abstract:
Circuits, structures and techniques for independently connecting a surrounding material in a part of a semiconductor device to a contact of its respective device. To achieve this, a combination of one or more conductive wells that are electrically isolated in at least one bias polarity are provided.
Public/Granted literature
- US20190252238A1 SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION Public/Granted day:2019-08-15
Information query
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