Invention Grant
- Patent Title: Vertical capacitors for microelectronics
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Application No.: US16217622Application Date: 2018-12-12
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Publication No.: US10600747B2Publication Date: 2020-03-24
- Inventor: Belgacem Haba , Javier A. Delacruz
- Applicant: Invensas Corporation
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/66 ; H01L23/498 ; H01L25/16 ; H01L21/48 ; H01L49/02 ; H01L23/00

Abstract:
Vertical capacitors for microelectronics are provided. An example thin capacitor layer can provide one or numerous capacitors to a semiconductor chip or integrated circuit. In an implementation, a thin capacitor layer of 50-100 μm thickness may have 5000 vertically disposed capacitor plates per linear centimeter, while occupying only a thin slice of the package. Electrodes for each capacitor plate are accessible at multiple surfaces. Electrode density for very fine pitch interconnects can be in the range of 2-200 μm separation between electrodes. A redistribution layer (RDL) may be fabricated on one or both sides of the thin capacitor layer to provide fan-out ball grid arrays that occupy insignificant space. RDLs or through-vias can connect together sets of the interior vertical capacitor plates within a given thin capacitor layer to form various capacitors from the plates to meet the needs of particular chips, dies, integrated circuits, and packages.
Public/Granted literature
- US20190214353A1 VERTICAL CAPACITORS FOR MICROELECTRONICS Public/Granted day:2019-07-11
Information query
IPC分类: