Invention Grant
- Patent Title: Ion implanting method
-
Application No.: US15362761Application Date: 2016-11-28
-
Publication No.: US10651003B2Publication Date: 2020-05-12
- Inventor: Ming-Ying Tsai , Ming-Hui Li , Chia-Cheng Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01J37/00
- IPC: H01J37/00 ; H01L21/265
Abstract:
An ion implanting method includes providing a gas having a bonding energy ranged from about 220 kJ/mol to about 450 kJ/mol; ionizing the gas to form a plurality of types of ions; and directing at least one of the types of the ions to implant a substance. The gas includes at least one of N2H4, CH3N2H3, C6H5N2H3, CFCl3 and C(CH3)3F.
Public/Granted literature
- US20180151369A1 ION IMPLANTING METHOD Public/Granted day:2018-05-31
Information query
