Invention Grant
- Patent Title: Semiconductor device, and method for manufacturing the same
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Application No.: US16208544Application Date: 2018-12-03
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Publication No.: US10651374B2Publication Date: 2020-05-12
- Inventor: Isamu Nishimura , Hirofumi Takeda
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2fefc13e com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@652dd1c1
- Main IPC: H01L43/14
- IPC: H01L43/14 ; H01L43/04 ; H01L43/06

Abstract:
A semiconductor device includes a substrate having a front surface and a mounting surface that are separate from each other in a thickness direction. The substrate is formed with a through-hole that penetrates through in the thickness direction. A semiconductor element is mounted on the front surface of the substrate, and a front-surface wire line is formed on the front surface of the substrate to be electrically connected to the semiconductor element. A column is provided inside the through-hole, and is electrically connected to the front-surface wiring line. An electrode pad is provided on the mounting surface of the substrate, and is electrically connected to the column. A resin-layer through portion is also provided inside the through-hole. The semiconductor element is covered with a sealing resin. The resin-layer through portion has an orthogonal surface in contact with the column. The orthogonal surface is orthogonal to the mounting surface.
Public/Granted literature
- US20190214555A1 SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2019-07-11
Information query
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