Invention Grant
- Patent Title: Method and system for a pseudo-differential low-noise amplifier at KU-band
-
Application No.: US16268002Application Date: 2019-02-05
-
Publication No.: US10651806B2Publication Date: 2020-05-12
- Inventor: Abhishek Jajoo , Vamsi Paidi
- Applicant: Maxlinear, Inc.
- Applicant Address: US CA Carlsbad
- Assignee: MAXLINEAR, INC.
- Current Assignee: MAXLINEAR, INC.
- Current Assignee Address: US CA Carlsbad
- Agency: McAndrews, Held & Malloy, Ltd.
- Main IPC: H03F3/45
- IPC: H03F3/45 ; H03F3/195 ; H03F1/52

Abstract:
Methods and systems for a pseudo-differential low-noise amplifier at Ku-band may comprise a low-noise amplifier (LNA) integrated on a semiconductor die, where the LNA includes first and second differential pair transistors with an embedded inductor tail integrated on the semiconductor die. The embedded inductor tail may include: a first inductor with a first terminal capacitively-coupled to a gate terminal of the first differential pair transistor and a second terminal of the first inductor coupled to second, third, and fourth inductors. The second inductor may be coupled to a source terminal of the first differential pair transistor, the fourth inductor may be coupled to a source terminal of the second differential pair transistor, and the third inductor may be capacitively-coupled to a gate terminal of the second differential pair transistor and also to ground. The second inductor may be embedded within the first inductor.
Public/Granted literature
- US20190173441A1 Method And System For A Pseudo-Differential Low-Noise Amplifier At KU-Band Public/Granted day:2019-06-06
Information query