Invention Grant
- Patent Title: Method of manufacturing emitter
-
Application No.: US16280719Application Date: 2019-02-20
-
Publication No.: US10658143B2Publication Date: 2020-05-19
- Inventor: Yoko Nakajima , Yoshimi Kawanami , Hironori Moritani , Hiroshi Oba
- Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Holland & Hart LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@66593e0e
- Main IPC: H01J9/02
- IPC: H01J9/02 ; H01J37/305 ; C25F3/08 ; C25F3/00 ; C25F3/16 ; C25F3/26

Abstract:
Disclosed is a method of manufacturing an emitter in which the tip of the emitter can be formed into a desired shape even when various materials are used for the emitter. The method includes performing an electrolytic polishing process of polishing a front end of a conductive emitter material so that a diameter of the front end is gradually reduced toward a tip; performing a first etching process by irradiating a processing portion of the emitter material processed by the electrolytic polishing process with a charged particle beam; performing a sputtering process by irradiating the pointed portion formed by the first etching process with a focused ion beam; and performing a secondary etching process of further sharpening the tip by an electric field induced gas etching processing while observing a crystal structure of the tip of the pointed portion processed by the sputtering process using a field ion microscope.
Public/Granted literature
- US20190267208A1 METHOD OF MANUFACTURING EMITTER Public/Granted day:2019-08-29
Information query