A chemical-mechanical polishing slurry composition, comprising a polishing agent, an amine-based polishing activator, and a roughness adjusting agent, wherein the amine-based polishing activator is a tertiary or quaternary amine, and the roughness adjusting agent is a disaccharide. According to the slurry composition, the roughness of tungsten and silicon oxide films can be modified and the number of particles present on the wafer surface after polishing can be reduces so that defects of the wafer can be prevented.