公开(公告)号：US12281383B2

公开(公告)日：2025-04-22

申请号：US17773287

申请日：2020-10-28

Applicant: SOULBRAIN CO., LTD.

Inventor： Chang Bong Yeon ,  Jin Hee Kim ,  Jae Sun Jung ,  Seok Jong Lee

IPC: C23C16/18 ,  C23C16/40 ,  C23C16/455

Abstract: The present invention relates to an indium precursor compound, a method of preparing a thin film using the same, and a board prepared using the same. More particularly, the present invention relates to an indium precursor compound represented by Chemical Formula 1, a method of preparing a thin film using the same, and a board prepared using the same.
According to the present invention, a uniform thin film may be formed, productivity may be increased due to an increased deposition rate, thermal stability and storage stability may be excellent, and an effect of easy handling may be obtained.

公开(公告)号：US20250026962A1

公开(公告)日：2025-01-23

申请号：US18898703

申请日：2024-09-27

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae-Wan PARK ,  Jung-Hun LIM ,  Jin-Uk LEE

IPC: C09G1/04 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/762 ,  H10B43/27 ,  H10B43/35

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.
The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

公开(公告)号：US20250003067A1

公开(公告)日：2025-01-02

申请号：US18691435

申请日：2022-09-13

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae Sun JUNG ,  Chang Bong YEON ,  Seung Hyun LEE ,  Jong Moon KIM

IPC: C23C16/455 ,  C07C19/07 ,  C07C19/08 ,  C07C19/10 ,  C07C19/14 ,  C23C16/34 ,  C23C16/44 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

Abstract: The present invention relates to a film quality improver, a method of forming a thin film using the film quality improver, and a semiconductor substrate fabricated using the method. According to the present invention, side reactions may be suppressed by using a film quality improver having a predetermined structure in a thin film deposition process, and process by-products in a thin film may be removed by appropriately controlling a thin film growth rate. As a result, even when the thin film is formed on a substrate having a complicated structure, step coverage and the thickness uniformity of the thin film may be greatly improved. In addition, corrosion or deterioration may be prevented, and the electrical properties of the thin film may be improved due to improvement in the crystallinity of the thin film.

公开(公告)号：US20240167151A1

公开(公告)日：2024-05-23

申请号：US17773287

申请日：2020-10-28

Applicant: SOULBRAIN CO., LTD.

Inventor： Chang Bong YEON ,  Jin Hee KIM ,  Jae Sun JUNG ,  Seok Jong LEE

IPC: C23C16/18 ,  C23C16/40 ,  C23C16/455

CPC classification number: C23C16/18 ,  C23C16/407 ,  C23C16/45525

Abstract: The present invention relates to an indium precursor compound, a method of preparing a thin film using the same, and a board prepared using the same. More particularly, the present invention relates to an indium precursor compound represented by Chemical Formula 1, a method of preparing a thin film using the same, and a board prepared using the same.
According to the present invention, a uniform thin film may be formed, productivity may be increased due to an increased deposition rate, thermal stability and storage stability may be excellent, and an effect of easy handling may be obtained.

公开(公告)号：US20240128510A1

公开(公告)日：2024-04-18

申请号：US18269521

申请日：2021-12-24

Applicant: SOULBRAIN CO., LTD.

Inventor： Ji Young CHOI ,  Min Goo KIM ,  Sang Ho LEE ,  Wan Chul KANG ,  Jong Cheol YUN ,  Ji Seong HAN ,  Min Jung JANG

IPC: H01M10/0567 ,  C07F9/141 ,  C07F9/6574 ,  H01M10/0568 ,  H01M10/0569

CPC classification number: H01M10/0567 ,  C07F9/1417 ,  C07F9/65742 ,  C07F9/65746 ,  C07F9/65748 ,  H01M10/0568 ,  H01M10/0569 ,  H01M2220/20 ,  H01M2300/004

Abstract: The present invention relates to a novel electrolyte and a secondary battery including the same. The present invention has an effect of providing a secondary battery having improved charging efficiency and output due to reduced charging resistance and having excellent long-term lifespan and high-temperature capacity retention rate.

公开(公告)号：US11667647B2

公开(公告)日：2023-06-06

申请号：US16712159

申请日：2019-12-12

Applicant: LG Display Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Suk-Young Bae ,  Tae-Ryang Hong ,  Jun-Yun Kim ,  Jin-Hee Kim ,  Ah-Rang Lee

IPC: C07D491/10 ,  C07D491/107 ,  C07D495/10 ,  H01L51/00 ,  H01L51/50

CPC classification number: C07D491/107 ,  C07D495/10 ,  H01L51/0054 ,  H01L51/0067 ,  H01L51/0072 ,  H01L51/0073 ,  H01L51/0074 ,  H01L51/5004

Abstract: The disclosure provides a delayed fluorescent compound of the Formula




and an organic light emitting diode including a first electrode, a second electrode and an organic emitting layer between the first and second electrodes, where the delayed fluorescent compound is included in the organic emitting layer, and an organic light emitting display device including the organic emitting layer.

公开(公告)号：US11634633B2

公开(公告)日：2023-04-25

申请号：US17087633

申请日：2020-11-03

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk Lee ,  Jae Wan Park ,  Jung Hun Lim

IPC: C09K13/06 ,  H01L21/02 ,  H01L29/66 ,  H01L27/11556 ,  H01L21/311

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US11634632B2

公开(公告)日：2023-04-25

申请号：US17087628

申请日：2020-11-03

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk Lee ,  Jae Wan Park ,  Jung Hun Lim

IPC: C09K13/06 ,  H01L27/11556 ,  H01L21/02 ,  H01L29/66 ,  H01L21/311

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US11370968B2

公开(公告)日：2022-06-28

申请号：US17087637

申请日：2020-11-03

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk Lee ,  Jae Wan Park ,  Jung Hun Lim

IPC: C09K13/06 ,  H01L21/02 ,  H01L29/66 ,  H01L27/11556 ,  H01L21/311

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US20220008300A1

公开(公告)日：2022-01-13

申请号：US17294613

申请日：2019-11-19

Applicant: SOULBRAIN CO., LTD.

Inventor： Jeong Ho LEE ,  Seok Joo KIM

IPC: A61K8/19 ,  A61K8/365 ,  A61K8/29 ,  A61K8/27 ,  A61Q17/04

Abstract: Disclosed are a sunscreen composition containing cerium oxide (CeO2) particles having surfaces modified with polyhydroxystearic acid and a method for preparing the sunscreen composition. The sunscreen composition containing cerium oxide (CeO2) particles having surfaces modified with polyhydroxystearic acid exhibits excellent dispersion stability even after a long period of time elapses.