Invention Grant
- Patent Title: Carrier substrate for a semiconductor device and a method for forming a carrier substrate for a semiconductor device
-
Application No.: US15935128Application Date: 2018-03-26
-
Publication No.: US10658201B2Publication Date: 2020-05-19
- Inventor: Sonja Koller , Georg Seidemann , Bernd Waidhas
- Applicant: Intel IP Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel IP Corporation
- Current Assignee: Intel IP Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: 2SPL Patent Attorneys PartG mbB
- Agent Kieran O'Leary
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/48 ; H01L23/498
Abstract:
A method for forming a carrier substrate for a semiconductor device, the method includes providing a substrate layer including conductive particles embedded in an electrically insulating material and localized heating of the substrate layer along a desired trace by a laser to form a conductive trace of merged particles along the desired trace.
Public/Granted literature
Information query
IPC分类:
