Invention Grant
- Patent Title: Method of fabricating integrated circuit
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Application No.: US15839769Application Date: 2017-12-12
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Publication No.: US10658241B2Publication Date: 2020-05-19
- Inventor: Chung-Liang Chu , Yu-Ruei Chen , Yu-Hsiang Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L27/02 ; H01L27/088 ; H01L23/522 ; H01L23/528 ; H01L23/50 ; H01L27/092 ; H01L29/78

Abstract:
A method of fabricating an integrated circuit includes the following steps. A first reticle is used to form a first pattern, wherein the first pattern includes a first feature and a first jog part protruding from and orthogonal to the first feature. A second reticle is used to form a second pattern, wherein the second pattern includes a second feature, and the first feature is between the second feature and the first jog part. A third reticle is used to form a third pattern, wherein the third pattern includes a third-one feature overlapping the first jog part and a third-two feature overlapping the second feature.
Public/Granted literature
- US20190181046A1 METHOD OF FABRICATING INTEGRATED CIRCUIT Public/Granted day:2019-06-13
Information query
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