Integrated circuit transistor structures are provided that may reduce capacitive parasitics by using metal on both sides (top and bottom) of a given integrated circuit transistor device layer. For example, in an embodiment, the drain metal interconnect is provided above the transistor device layer, and the source metal interconnect is provided below the transistor layer. Such a configuration reduces the parasitic capacitance not only between the source and drain metal interconnect layers, but also between the neighboring conductors of the drain metal interconnect layer, because the number of pass-thru conductors in the drain metal interconnect layer to access an upper conductor in the source metal interconnect layer is reduced. In other embodiments, the source metal interconnect remains above the transistor device layer, and the drain metal interconnect is moved to below the transistor device layer, to provide similar benefits. Techniques apply equally to any transistor type, including FETs and BJTs.