Invention Grant
- Patent Title: Radio-frequency isolated gate driver for power semiconductors
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Application No.: US16287058Application Date: 2019-02-27
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Publication No.: US10659036B2Publication Date: 2020-05-19
- Inventor: Hui Li , Yanjun Shi
- Applicant: The Florida State University Research Foundation, Inc.
- Applicant Address: US FL Tallahassee
- Assignee: The Florida State University Research Foundation, Inc.
- Current Assignee: The Florida State University Research Foundation, Inc.
- Current Assignee Address: US FL Tallahassee
- Agency: Meunier Carlin & Curfman LLC
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H02M1/08 ; H03K17/082 ; H02M3/335

Abstract:
A gate driver for power semiconductors is disclosed. The gate driver includes modulation to modulate signals from a controller to a radio frequency (RF) range that is much higher than frequencies associated with conducted EMI. The gate driver also includes RF transformer and tank circuit to that couples the modulated signals, filters EMI, and provides galvanic isolation. The gate driver further includes a RF demodulator and unfolder circuit for converting the RF signal into a signal appropriate for controlling the gate of a power semiconductor for switching. Additionally, the disclosed gate driver provides active gate control using programmable waveforms with values that can range over a continuous range of voltages.
Public/Granted literature
- US20190267985A1 RADIO-FREQUENCY ISOLATED GATE DRIVER FOR POWER SEMICONDUCTORS Public/Granted day:2019-08-29
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