Invention Grant
- Patent Title: Control of an anode-gate thyristor
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Application No.: US16240409Application Date: 2019-01-04
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Publication No.: US10659041B2Publication Date: 2020-05-19
- Inventor: Ghafour Benabdelaziz , Romain Pichon
- Applicant: STMicroelectronics (Tours) SAS
- Applicant Address: FR Tours
- Assignee: STMicroelectronics (Tours) SAS
- Current Assignee: STMicroelectronics (Tours) SAS
- Current Assignee Address: FR Tours
- Agency: Crowe & Dunlevy
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7fa43b10
- Main IPC: H02M1/08
- IPC: H02M1/08 ; H02M1/32 ; H03K17/725 ; H02M7/15 ; H03K17/72 ; H02M7/162 ; H03K17/10

Abstract:
A circuit for controlling an anode-gate thyristor includes a first transistor that couples a thyristor gate to a first terminal to receive a potential lower than a potential of a second terminal connected to the thyristor anode. A control terminal of the first transistor is driven by a control signal which is positive with respect to the potential of the first terminal.
Public/Granted literature
- US20190214985A1 CONTROL OF AN ANODE-GATE THYRISTOR Public/Granted day:2019-07-11
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