Invention Grant
- Patent Title: Method of preventing bulk silicon charge transfer for nanowire and nanoslab processing
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Application No.: US16220988Application Date: 2018-12-14
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Publication No.: US10665672B2Publication Date: 2020-05-26
- Inventor: Jeffrey Smith , Anton deVilliers
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/088 ; B82Y10/00 ; H01L29/66 ; H01L29/775 ; H01L21/762 ; H01L29/786 ; H01L21/225 ; H01L21/324 ; H01L21/8234 ; H01L29/08 ; H01L29/10 ; H01L29/167 ; H01L29/423 ; H01L29/78 ; H01L29/49 ; H01L29/51
Abstract:
A method of fabricating a semiconductor device includes providing a substrate having a layered fin structure thereon. The layered fin structure includes base fin portion, a sacrificial portion provided on the base fin portion and a channel portion provided on the sacrificial portion. A doping source film is provided on the substrate over the layered fin structure, and diffusing doping materials from the doping source film into a portion of the layered fin structure other than the channel portion to form a diffusion doped region in the layered fin structure. An isolation material is provided on the substrate over at least the diffusion doped region of the layered fin structure.
Public/Granted literature
- US20190140050A1 METHOD OF PREVENTING BULK SILICON CHARGE TRANSFER FOR NANOWIRE AND NANOSLAB PROCESSING Public/Granted day:2019-05-09
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