Invention Grant
- Patent Title: Optoelectronic device
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Application No.: US16559117Application Date: 2019-09-03
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Publication No.: US10665756B2Publication Date: 2020-05-26
- Inventor: Chang-Huei Jing , Chien-Fu Shen
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinshu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinshu
- Agency: Patterson + Sheridan, LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7e4401cf com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1509c47f
- Main IPC: H01L33/08
- IPC: H01L33/08 ; H01L23/00 ; H01L27/15 ; H01L33/38 ; H01L25/075 ; H01L33/00 ; H01L33/20 ; H01L33/62

Abstract:
An optoelectronic device comprises a substrate; a groove on the substrate; a plurality of semiconductor units on the substrate and separated by the groove, wherein each semiconductor unit comprises a first semiconductor layer, a second semiconductor layer, and an active region interposed between the first semiconductor layer and the second semiconductor layer; a connecting part crossing the groove for connecting two of the plurality of semiconductor units, wherein the connecting part comprises one end on the first semiconductor layer and another end on the second semiconductor layer; a first electrode comprising a plurality of first extensions jointly connected to the one end of the connecting part; and a second electrode comprising a plurality of second extensions jointly connected to the another end of the connecting part, wherein an amount of the plurality of first extensions is different from an amount of the plurality of second extensions.
Public/Granted literature
- US20200006600A1 OPTOELECTRONIC DEVICE Public/Granted day:2020-01-02
Information query
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