Invention Grant
- Patent Title: Particle removal method and substrate processing method
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Application No.: US15841817Application Date: 2017-12-14
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Publication No.: US10668512B2Publication Date: 2020-06-02
- Inventor: Jun Sato , Masato Yonezawa , Takashi Chiba
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@619d5d41
- Main IPC: B08B5/02
- IPC: B08B5/02 ; B05B1/18 ; H01L21/02 ; H01L21/465 ; B05D1/00 ; H01L21/311 ; H01J37/32 ; C23C16/455 ; C23C16/44
Abstract:
A particle removal method is provided for removing particles on a film etched using a fluorine-containing gas. In the method, a mixed gas of an activated oxygen-containing gas and hydrogen gas added to the activated oxygen-containing gas is supplied to the etched film.
Public/Granted literature
- US20180169716A1 PARTICLE REMOVAL METHOD AND SUBSTRATE PROCESSING METHOD Public/Granted day:2018-06-21
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