Invention Grant
- Patent Title: Voltage system providing pump voltage for memory device and method for operating the same
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Application No.: US15911586Application Date: 2018-03-05
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Publication No.: US10672453B2Publication Date: 2020-06-02
- Inventor: Ting-Shuo Hsu
- Applicant: NANYA TECHNOLOGY CORP.
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/4074 ; G11C29/56

Abstract:
The present disclosure provides a charge pump system and a method of operating the same. The charge pump system includes a first pump circuit, a second pump circuit and a control device. The first pump circuit is configured to operate in a first voltage domain. The second pump circuit is configured to operate in a second voltage domain different from the first voltage domain. The control device is configured to selectively enable one of the first pump circuit and the second pump circuit based on an operating environment, wherein the one of the first pump circuit and the second pump circuit provides a pump voltage.
Public/Granted literature
- US20190272864A1 VOLTAGE SYSTEM AND METHOD FOR OPERATING THE SAME Public/Granted day:2019-09-05
Information query