Invention Grant
- Patent Title: Grafting design for pattern post-treatment in semiconductor manufacturing
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Application No.: US15600037Application Date: 2017-05-19
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Publication No.: US10672610B2Publication Date: 2020-06-02
- Inventor: Siao-Shan Wang , Ching-Yu Chang , Chin-Hsiang Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/027 ; G03F7/40

Abstract:
A method for lithography patterning includes forming an opening in a first layer over a substrate and coating a grafting solution over the first layer and filling in the opening. The grafting solution comprises a grafting compound and a solvent. The grafting compound comprises a grafting unit chemically bonded to a linking unit chemically bonded to a polymer backbone. The linking unit comprises an alkyl segment. The grafting unit is attachable to the first layer. The method further includes curing the grafting solution so that a first portion of the grafting compound is attached to a surface of the first layer, thereby forming a second layer over the surface of the first layer.
Public/Granted literature
- US20180337044A1 Grafting Design for Pattern Post-Treatment in Semiconductor Manufacturing Public/Granted day:2018-11-22
Information query
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