Invention Grant
- Patent Title: Memory management method, memory control circuit unit and memory storage apparatus
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Application No.: US16045754Application Date: 2018-07-26
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Publication No.: US10678477B2Publication Date: 2020-06-09
- Inventor: Bo-Cheng Ko
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: JCIPRNET
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6cfec81f
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
A memory management method for a rewritable non-volatile memory module, a memory control circuit unit and a memory storage apparatus are provided. The rewritable non-volatile memory module includes a plurality of super physical units, and the super physical units at least include a plurality of good super physical units and a plurality of partial good super physical units. The method includes: receiving a host write command; selecting a first super physical unit set according a number rate of the good super physical units and the partial good super physical units, and the first super physical unit set includes a plurality of first good super physical units and at least one first partial good super physical unit selected from the super physical units according to the number rate; and writing data into the good physical erasing units of the first super physical unit set, in response to the host write command.
Public/Granted literature
- US20190377514A1 MEMORY MANAGEMENT METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE APPARATUS Public/Granted day:2019-12-12
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