Invention Grant
- Patent Title: Method and apparatus for using back gate biasing for power amplifiers for millimeter wave devices
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Application No.: US16367113Application Date: 2019-03-27
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Publication No.: US10680557B2Publication Date: 2020-06-09
- Inventor: Shafiullah Syed , Abdellatif Bellaouar , Chi Zhang
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H03F1/02
- IPC: H03F1/02 ; H03F3/195 ; H04B1/04 ; H03F3/45 ; H03F3/217 ; H03F1/14 ; H01L21/84 ; H01L27/12

Abstract:
An apparatus, comprising an input transformer; a first differential transistor pair configured to receive a first back gate bias voltage; a second differential transistor pair configured to receive a second back gate bias voltage; a cross-coupled neutralization cap comprising PMOS or NMOS transistors and configured to receive a third back gate bias voltage; and an output transformer. A method of fixing at least one back gate bias voltage to impart a desired capacitance to the transistors of at least one of the first differential transistor pair, the second differential transistor pair, or the neutralization cap. The apparatus and method may provide a power amplifier having improved linearity and efficiency.
Public/Granted literature
- US20190267946A1 METHOD AND APPARATUS FOR USING BACK GATE BIASING FOR POWER AMPLIFIERS FOR MILLIMETER WAVE DEVICES Public/Granted day:2019-08-29
Information query
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