Invention Grant
- Patent Title: Capacitive microelectromechanical device and method for forming a capacitive microelectromechanical device
-
Application No.: US15200299Application Date: 2016-07-01
-
Publication No.: US10684306B2Publication Date: 2020-06-16
- Inventor: Steffen Bieselt , Heiko Froehlich , Thoralf Kautzsch , Andre Roeth , Maik Stegemann , Mirko Vogt , Bernhard Winkler
- Applicant: Infineon Technologies AG
- Applicant Address: DE
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE
- Agency: Design IP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4c2d1b95
- Main IPC: G01P15/125
- IPC: G01P15/125 ; G01P15/08

Abstract:
A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.
Public/Granted literature
Information query
IPC分类: