Invention Grant
- Patent Title: Wrapped contacts with enhanced area
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Application No.: US16045905Application Date: 2018-07-26
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Publication No.: US10693007B2Publication Date: 2020-06-23
- Inventor: Kangguo Cheng , Zuoguang Liu , Heng Wu , Peng Xu
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: CA
- Assignee: ELPIS TECHNOLOGIES INC.
- Current Assignee: ELPIS TECHNOLOGIES INC.
- Current Assignee Address: CA
- Agency: Tuntunjian & Bitetto, P.C.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/088 ; H01L23/528 ; H01L21/311 ; H01L21/308 ; H01L21/306 ; H01L21/8234 ; H01L21/02 ; H01L29/66
Abstract:
Semiconductor devices include semiconductor fins and fin extensions formed on the semiconductor fins that extend vertically and laterally beyond boundaries of the plurality of semiconductor fins. A first dielectric layer is formed on sidewalls of the semiconductor fins and between the semiconductor fins. A conductive liner is formed on the fin extensions that covers a top surface of the first dielectric layer between the semiconductor fins. A conductive contact is formed on the conductive liner.
Public/Granted literature
- US20180350991A1 WRAPPED SOURCE/DRAIN CONTACTS WITH ENHANCED AREA Public/Granted day:2018-12-06
Information query
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