Invention Grant
- Patent Title: Method of selectively transferring semiconductor device
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Application No.: US15683041Application Date: 2017-08-22
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Publication No.: US10693034B2Publication Date: 2020-06-23
- Inventor: Hao-Min Ku , You-Hsien Chang , Shih-I Chen , Fu-Chun Tsai , Hsin-Chih Chiu
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L33/62 ; H01L33/00

Abstract:
A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.
Public/Granted literature
- US20170373219A1 METHOD OF SELECTIVELY TRANSFERRING SEMICONDUCTOR DEVICE Public/Granted day:2017-12-28
Information query
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