Invention Grant
- Patent Title: Semiconductor device and control method of the same
-
Application No.: US15950968Application Date: 2018-04-11
-
Publication No.: US10693476B2Publication Date: 2020-06-23
- Inventor: Yuichi Maruyama , Noriaki Matsuno
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@65e2f60e
- Main IPC: H03L7/099
- IPC: H03L7/099 ; H03K3/53 ; H03L1/02 ; H03B5/04 ; H03B5/36

Abstract:
Increases of circuit scale and power consumption are suppressed while frequency deviation is kept within a predetermined allowable range. A semiconductor device according to an embodiment includes a variable load capacity circuit including a plurality of load capacity elements coupled in parallel to one end of a crystal resonator and a plurality of switches that are respectively serially coupled to the load capacity elements, and a switch control unit that controls ON/OFF of the switches on the basis of information to be an index of frequency deviation due to temperature change of a frequency signal obtained by oscillating the crystal resonator. The switch control unit changes the number of switches that will be turned ON among the plurality of switches so that an absolute value of the frequency deviation becomes small when the information is not included in a predetermined allowable range.
Public/Granted literature
- US20180358973A1 SEMICONDUCTOR DEVICE AND CONTROL METHOD OF THE SAME Public/Granted day:2018-12-13
Information query