Invention Grant
- Patent Title: Method for fabricating semiconductor device
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Application No.: US15806277Application Date: 2017-11-07
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Publication No.: US10707135B2Publication Date: 2020-07-07
- Inventor: Kuan-Hao Tseng , Chien-Ting Lin , Shih-Hung Tsai , Po-Kuang Hsieh , Yu-Ting Tseng , Chueh-Fei Tai , Cheng-Ping Kuo
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@24b2bc7f
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/8238 ; H01L21/308 ; H01L21/306 ; H01L21/02 ; H01L27/092 ; H01L29/165 ; H01L21/3065 ; H01L29/66 ; H01L29/167 ; H01L21/762 ; H01L21/266 ; H01L21/265
Abstract:
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first well in the substrate on the first region and a second well in the substrate on the second region; removing part of the first well to form a first recess; and forming a first epitaxial layer in the first recess.
Public/Granted literature
- US20190131183A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2019-05-02
Information query
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