Invention Grant
- Patent Title: One-way switch with a gate referenced to the main back side electrode
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Application No.: US16052378Application Date: 2018-08-01
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Publication No.: US10707337B2Publication Date: 2020-07-07
- Inventor: Samuel Menard
- Applicant: STMicroelectronics (Tours) SAS
- Applicant Address: FR Tours
- Assignee: STMicroelectronics (Tours) SAS
- Current Assignee: STMicroelectronics (Tours) SAS
- Current Assignee Address: FR Tours
- Agency: Crowe & Dunlevy
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5d49282e
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L29/66 ; H01L29/423 ; H01L29/06 ; H01L29/747 ; H01L29/08
Abstract:
A one-way switch has a gate referenced to a main back side electrode. An N-type substrate includes a P-type anode layer covering a back side and a surrounding P-type wall. First and second P-type wells are formed on the front side of the N-type substrate. An N-type cathode region is located in the first P-type well. An N-type gate region is located in the second P-type well. A gate metallization covers both the N-type gate region and a portion of the second P-type well. The second P-type well is separated from the P-type wall by the N-type substrate except at a location of a P-type strip that is formed in the N-type substrate and connects a portion on one side of the second P-type well to an upper portion of said P-type wall.
Public/Granted literature
- US20190043972A1 ONE-WAY SWITCH WITH A GATE REFERENCED TO THE MAIN BACK SIDE ELECTRODE Public/Granted day:2019-02-07
Information query
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