Invention Grant
- Patent Title: Light-emitting device and manufacturing method thereof
-
Application No.: US16051842Application Date: 2018-08-01
-
Publication No.: US10714657B2Publication Date: 2020-07-14
- Inventor: Yen-Tai Chao , Sen-Jung Hsu , Tao-Chi Chang , Wei-Chih Wen , Ou Chen , Yu-Shou Wang , Chun-Hsiang Tu , Jing-Feng Huang
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L33/12
- IPC: H01L33/12 ; H01L33/20 ; H01L33/00 ; H01L33/22 ; H01L33/10 ; H01L33/16

Abstract:
A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack including a first upper surface and a first side wall, wherein the first semiconductor stack is on the first portion; a second semiconductor stack including a second upper surface and a second side wall, wherein the second semiconductor stack is on the first upper surface, and wherein the second side wall is devoid of connecting the first side wall; a plurality of first concavo-convex structures on the first portion; and a plurality of second concavo-convex structures on the second portion; wherein the first side wall and the second portion of the top surface form an acute angle α between thereof; and wherein the second concavo-convex structures have smaller size than that of the first concavo-convex structures.
Public/Granted literature
- US20180374990A1 LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-12-27
Information query
IPC分类: