Invention Grant
- Patent Title: Selective cyclic dry etching process of dielectric materials using plasma modification
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Application No.: US16041044Application Date: 2018-07-20
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Publication No.: US10720334B2Publication Date: 2020-07-21
- Inventor: Rene Henricus Jozef Vervuurt , Nobuyoshi Kobayashi , Takayoshi Tsutsumi , Masaru Hori
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP HOLDING B.V.
- Current Assignee: ASM IP HOLDING B.V.
- Current Assignee Address: NL Almere
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/3065 ; H01L21/3213 ; C23C16/02 ; B81C1/00 ; C30B31/00 ; C30B33/08 ; C30B33/12 ; H01L21/311 ; H01L21/308 ; H01L21/3105
Abstract:
In some embodiments, a selective cyclic (optionally dry) etching of a first surface of a substrate relative to a second surface of the substrate in a reaction chamber by chemical atomic layer etching comprises forming a modification layer using a first plasma and etching the modification layer. The first surface comprises carbon and/or nitride and the second surface does not comprise carbon and/or nitride.
Public/Granted literature
- US20200027740A1 SELECTIVE CYCLIC DRY ETCHING PROCESS OF DIELECTRIC MATERIALS USING PLASMA MODIFICATION Public/Granted day:2020-01-23
Information query
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