Invention Grant
- Patent Title: Layer structure including diffusion barrier layer and method of manufacturing the same
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Application No.: US16257189Application Date: 2019-01-25
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Publication No.: US10727182B2Publication Date: 2020-07-28
- Inventor: Hyunjae Song , Seunggeol Nam , Yeonchoo Cho , Seongjun Park , Hyeonjin Shin , Jaeho Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1234199c
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/532 ; H01L21/768 ; H01L23/522

Abstract:
Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.
Public/Granted literature
- US20190157212A1 LAYER STRUCTURE INCLUDING DIFFUSION BARRIER LAYER AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-05-23
Information query
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