Invention Grant
- Patent Title: Long-channel fin field effect transistors
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Application No.: US15881179Application Date: 2018-01-26
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Publication No.: US10727352B2Publication Date: 2020-07-28
- Inventor: Zhenxing Bi , Kangguo Cheng , Peng Xu , Juntao Li
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/3065 ; H01L29/10 ; H01L29/66 ; H01L29/78 ; H01L29/423 ; H01L27/12
Abstract:
A method of forming a long-channel fin field effect device is provided. The method includes forming a trench in a substrate, forming a pedestal in the trench, wherein the pedestal extends above the surface of the substrate, forming a sacrificial pillar on the pedestal, forming a rounded top surface on the sacrificial pillar to form a sacrificial support structure, forming a fin material layer on the exposed surface of the sacrificial support structure, and removing the sacrificial support structure to leave a free-standing inverted U-shaped fin.
Public/Granted literature
- US20190237580A1 LONG-CHANNEL FIN FIELD EFFECT TRANSISTORS Public/Granted day:2019-08-01
Information query
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