A manufacturing system performs a deposition of an etch-compatible film over a substrate. The etch-compatible film includes a first surface and a second surface opposite to the first surface. The manufacturing system performs a partial removal of the etch-compatible film to create a surface profile on the first surface with a plurality of depths relative to the substrate. The manufacturing system performs a deposition of a second material over the profile created in the etch-compatible film. The manufacturing system performs a planarization of the second material to obtain a plurality of etch heights of the second material in accordance with the plurality of depths in the profile created in the etch-compatible film. The manufacturing system performs a lithographic patterning of a photoresist deposited over the planarized second material to obtain the plurality of etch heights and one or more duty cycles in the second material.