Aluminum indium phosphide subfin germanium channel transistors

Invention Grant

US10734488B2 Aluminum indium phosphide subfin germanium channel transistors 有权

Please log in to see more content

Patent Title: Aluminum indium phosphide subfin germanium channel transistors
Application No.: US15752209

Application Date: 2015-09-11
Publication No.: US10734488B2

Publication Date: 2020-08-04
Inventor: Matthew V. Metz , Willy Rachmady , Harold W. Kennel , Van H. Le , Benjamin Chu-Kung , Jack T. Kavalieros , Gilbert Dewey
Applicant: Intel Corporation
Applicant Address: US CA Santa Clara
Assignee: Intel Corporation
Current Assignee: Intel Corporation
Current Assignee Address: US CA Santa Clara
Agency: Green, Howard & Mughal LLP
International Application: PCT/US2015/049634 WO 20150911
International Announcement: WO2017/044117 WO 20170316
Main IPC: H01L29/267
IPC: H01L29/267 ; H01L27/092 ; H01L29/10 ; H01L27/11 ; H01L29/78 ; H01L21/8238 ; H01L29/66

Aluminum indium phosphide subfin germanium channel transistors

Abstract:

Embodiments related to transistors and integrated circuits having aluminum indium phosphide subfins and germanium channels, systems incorporating such transistors, and methods for forming them are discussed.

Public/Granted literature

US20200212186A1 ALUMINUM INDIUM PHOSPHIDE SUBFIN GERMANIUM CHANNEL TRANSISTORS Public/Granted day:2020-07-02

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02	.按其半导体本体的特征区分的
H01L29/12	..按其构成材料的特征区分的
H01L29/26	...除掺杂材料或其他杂质外，包括有包含在H01L29/16，H01L29/18，H01L29/20，H01L29/22，H01L29/24各组中两组或更多个组内的元素的
H01L29/267	....在不同半导体区域中的