A semiconductor and a method of creating the same are provided. The semiconductor structure includes a first set of fins and a second set of fins disposed on a substrate. There is a high-k dielectric disposed on top of the substrate and the first and second set of fins. There is a work-function metal disposed on top of the high-k dielectric. There is a pinch-off layer disposed on top of the work-function metal (WFM). There is a first dielectric layer disposed on top of the pinch-off layer. There is a second dielectric material configured as a gate cut between the first set of fins and the second set of fins, wherein the second dielectric material cuts through the nitride, pinch-off, and WFM layers.