Invention Grant
- Patent Title: Transistor bridge failure test
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Application No.: US15077524Application Date: 2016-03-22
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Publication No.: US10746806B2Publication Date: 2020-08-18
- Inventor: Alexander Heinz , Matthias Bogus
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Shumaker & Sieffert, P.A.
- Main IPC: G01R31/50
- IPC: G01R31/50 ; G01R31/44 ; G01R31/42 ; G01R19/165

Abstract:
A driver circuit arrangement for driving a transistor bridge, which includes at least a first half-bridge composed of a low-side transistor and a high-side transistor, is described herein. In accordance with one example of the description, the circuit includes a current source and a detection circuit. The current source is operably coupled to the high-side transistor of the first half-bridge and configured to supply a test current to the first half bridge. The detection circuit is configured to compare a voltage sense signal, which represents the voltage across the high-side transistor of the first half-bridge, with at least one first threshold to detect, dependent on the result of this comparison, whether a short-circuit is present in the first half-bridge.
Public/Granted literature
- US20170276715A1 TRANSISTOR BRIDGE FAILURE TEST Public/Granted day:2017-09-28
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