公开(公告)号：US11686781B2

公开(公告)日：2023-06-27

申请号：US16932435

申请日：2020-07-17

Applicant: Infineon Technologies AG

Inventor： Alexander Heinz ,  Matthias Bogus

IPC: G01R31/42 ,  G01R31/44 ,  G01R31/50 ,  G01R31/52 ,  G01R19/165

CPC classification number: G01R31/42 ,  G01R19/16528 ,  G01R31/44 ,  G01R31/50 ,  G01R31/52

Abstract: A driver circuit arrangement for driving a transistor bridge, which includes at least a first half-bridge composed of a low-side transistor and a high-side transistor, is described herein. In accordance with one example of the description, the circuit includes a current source and a detection circuit. The current source is operably coupled to the high-side transistor of the first half-bridge and configured to supply a test current to the first half bridge. The detection circuit is configured to compare a voltage sense signal, which represents the voltage across the high-side transistor of the first half-bridge, with at least one first threshold to detect, dependent on the result of this comparison, whether a short-circuit is present in the first half-bridge.

公开(公告)号：US20170276715A1

公开(公告)日：2017-09-28

申请号：US15077524

申请日：2016-03-22

Applicant: Infineon Technologies AG

Inventor： Alexander Heinz ,  Matthias Bogus

IPC: G01R31/02 ,  G01R19/165

Abstract: A driver circuit arrangement for driving a transistor bridge, which includes at least a first half-bridge composed of a low-side transistor and a high-side transistor, is described herein. In accordance with one example of the description, the circuit includes a current source and a detection circuit. The current source is operably coupled to the high-side transistor of the first half-bridge and configured to supply a test current to the first half bridge. The detection circuit is configured to compare a voltage sense signal, which represents the voltage across the high-side transistor of the first half-bridge, with at least one first threshold to detect, dependent on the result of this comparison, whether a short-circuit is present in the first half-bridge.

公开(公告)号：US10746806B2

公开(公告)日：2020-08-18

申请号：US15077524

申请日：2016-03-22

Applicant: Infineon Technologies AG

Inventor： Alexander Heinz ,  Matthias Bogus

IPC: G01R31/50 ,  G01R31/44 ,  G01R31/42 ,  G01R19/165

Abstract: A driver circuit arrangement for driving a transistor bridge, which includes at least a first half-bridge composed of a low-side transistor and a high-side transistor, is described herein. In accordance with one example of the description, the circuit includes a current source and a detection circuit. The current source is operably coupled to the high-side transistor of the first half-bridge and configured to supply a test current to the first half bridge. The detection circuit is configured to compare a voltage sense signal, which represents the voltage across the high-side transistor of the first half-bridge, with at least one first threshold to detect, dependent on the result of this comparison, whether a short-circuit is present in the first half-bridge.

公开(公告)号：US20200348366A1

公开(公告)日：2020-11-05

申请号：US16932435

申请日：2020-07-17

Applicant: Infineon Technologies AG

Inventor： Alexander Heinz ,  Matthias Bogus

IPC: G01R31/50 ,  G01R31/44 ,  G01R31/42 ,  G01R19/165

Abstract: A driver circuit arrangement for driving a transistor bridge, which includes at least a first half-bridge composed of a low-side transistor and a high-side transistor, is described herein. In accordance with one example of the description, the circuit includes a current source and a detection circuit. The current source is operably coupled to the high-side transistor of the first half-bridge and configured to supply a test current to the first half bridge. The detection circuit is configured to compare a voltage sense signal, which represents the voltage across the high-side transistor of the first half-bridge, with at least one first threshold to detect, dependent on the result of this comparison, whether a short-circuit is present in the first half-bridge.