Invention Grant
- Patent Title: Semiconductor substrate including embedded component and method of manufacturing the same
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Application No.: US15356407Application Date: 2016-11-18
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Publication No.: US10748843B2Publication Date: 2020-08-18
- Inventor: Li Chuan Tsai , Po-Shu Peng , Cheng-Lin Ho , Chih Cheng Lee
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H05K1/18
- IPC: H05K1/18 ; H01L23/498 ; H05K3/46 ; H01L21/48

Abstract:
A semiconductor substrate includes a multi-layered structure, a component and a first conductive via. The multi-layered structure includes a plurality of dielectric layers and a plurality of patterned conductive layers. A topmost patterned conductive layer of the patterned conductive layers is embedded in a topmost dielectric layer of the dielectric layers. The component is embedded in the multi-layered structure. The first conductive via is electrically connected to the component and one of the patterned conductive layers. At least one of the patterned conductive layers is located at a depth spanning between a top surface of the passive layer and a bottom surface of the component
Public/Granted literature
- US20180145017A1 SEMICONDUCTOR SUBSTRATE INCLUDING EMBEDDED COMPONENT AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-05-24
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