Invention Grant
- Patent Title: Stress isolation for silicon photonic applications
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Application No.: US15859331Application Date: 2017-12-30
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Publication No.: US10748844B2Publication Date: 2020-08-18
- Inventor: Siddarth Kumar , Shawna M. Liff
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/48 ; H01L23/00 ; G02B6/122 ; G02B6/12 ; G02B6/42

Abstract:
Techniques of minimizing or eliminating stresses in silicon photonic integrated circuits (Si-PICs) and in semiconductor packages having one or more Si-PICs (Si-PIC packages) are described. An Si-PIC or an Si-PIC package includes a stress minimization solution that assists with filtering out stresses by selectively isolating photonic and/or electronic devices, by isolating components or devices in an Si-PIC or an Si-PIC package that are sources of stress, or by isolating an Si-PIC in an Si-PIC package. The stress minimization solution may include strategically placed cavities and a stage that assist with minimizing or preventing transfer of stress to one or more photonic and/or electronic devices in an Si-PIC or an Si-PIC package.
Public/Granted literature
- US20190206782A1 STRESS ISOLATION FOR SILICON PHOTONIC APPLICATIONS Public/Granted day:2019-07-04
Information query
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