Invention Grant
- Patent Title: Metallization structure and manufacturing method thereof
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Application No.: US15851054Application Date: 2017-12-21
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Publication No.: US10750619B2Publication Date: 2020-08-18
- Inventor: Ming-Huei Yen
- Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Applicant Address: TW Hsinchu
- Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H05K1/09
- IPC: H05K1/09 ; H05K3/18 ; C23C18/16 ; C23C18/18 ; H01L23/532 ; H01L21/768 ; H01L21/288 ; H01L21/48 ; H01L23/498 ; C23C18/20

Abstract:
Graphene oxide is used as an insulation barrier layer for metal deposition. After patterning and modification, the chemical characteristics of graphene oxide are induced. It can be used as the catalyst for electroless plating in the metallization process, so that the metal is only deposited on the patterned area. It provides the advantages of improving reliability and yield. The metallization structure includes a substrate, a graphene oxide catalytic layer, and a metal layer. It may be widely applied to the metallization of the fine pitch metal of a semiconductor package as well as the fine pitch wires of a printed circuit board (PCB), touch panels, displays, fine electrodes of solar cells, and so on.
Public/Granted literature
- US20190200459A1 METALLIZATION STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-06-27
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