Invention Grant
- Patent Title: Resistance change memory device and fabrication method thereof
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Application No.: US16129764Application Date: 2018-09-12
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Publication No.: US10756264B2Publication Date: 2020-08-25
- Inventor: Frederick Chen
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: JCIPRNET
- Main IPC: H01L45/00
- IPC: H01L45/00 ; G11C13/00 ; G11C11/00 ; H01L27/24

Abstract:
The resistance change memory device including a first resistance change memory element, a second resistance change memory element, and a memory controller is provided. The first resistance change memory element is disposed on a chip. The second resistance change memory element is disposed on the same chip. The memory controller is disposed on the same chip. The memory controller is configured to control data access of the first resistance change memory element and the second resistance change memory element. An accessing frequency of the first resistance change memory element is different from an accessing frequency of the second resistance change memory element.
Public/Granted literature
- US20190027683A1 RESISTANCE CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2019-01-24
Information query
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