Invention Grant
- Patent Title: Memory management method, memory storage device and memory control circuit unit
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Application No.: US15435310Application Date: 2017-02-17
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Publication No.: US10761732B2Publication Date: 2020-09-01
- Inventor: Po-Wen Hsiao , Hsueh-Chi Lu
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: JCIPRNET
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@347eacac
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
A memory management method, a memory storage device and a memory control circuit unit are provided. The method includes: obtaining a usage status of a first physical unit of a rewritable non-volatile memory module for storing data from a host system; determining a first rule according to the usage status; and performing a first operation according to the first rule. The first operation includes: storing a first data from the host system into the first physical unit; and storing a second data from the rewritable non-volatile memory module into a second physical unit, where the first rule corresponds to a first ratio between a data volume of the first data and a data volume of the second data. Accordingly, the memory storage device can store external and internal data stably.
Public/Granted literature
- US20180165009A1 MEMORY MANAGEMENT METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT Public/Granted day:2018-06-14
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