Invention Grant
- Patent Title: Compact high energy ion implantation system
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Application No.: US15995913Application Date: 2018-06-01
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Publication No.: US10763071B2Publication Date: 2020-09-01
- Inventor: Frank Sinclair
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01J37/08
- IPC: H01J37/08 ; H01J37/05 ; H05H9/00 ; H01J37/317

Abstract:
An apparatus may include an ion source, arranged to generate an ion beam at a first ion energy. The apparatus may further include a DC accelerator column, disposed downstream of the ion source, and arranged to accelerate the ion beam to a second ion energy, the second ion energy being greater than the first ion energy. The apparatus may include a linear accelerator, disposed downstream of the DC accelerator column, the linear accelerator arranged to accelerate the ion beam to a third ion energy, greater than the second ion energy.
Public/Granted literature
- US20190371562A1 COMPACT HIGH ENERGY ION IMPLANTATION SYSTEM Public/Granted day:2019-12-05
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