Invention Grant
- Patent Title: Pseudo-channeled DRAM
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Application No.: US16106911Application Date: 2018-08-21
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Publication No.: US10770129B2Publication Date: 2020-09-08
- Inventor: Hussein Alameer , Kjersten Criss , Uksong Kang
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Jordan IP Law, LLC
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C11/4076 ; H01L27/02 ; G11C5/04 ; G06F12/08 ; G11C11/4093

Abstract:
An embodiment of a semiconductor apparatus may include technology to provide two or more dynamic random access memory devices, and provide access to the two or more dynamic random access memory devices with two or more pseudo-channels per memory channel. Other embodiments are disclosed and claimed.
Public/Granted literature
- US20190043552A1 PSEUDO-CHANNELED DRAM Public/Granted day:2019-02-07
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