Techniques are disclosed for forming nanowire transistor architectures in which the presence of gate material between neighboring nanowires is eliminated or otherwise reduced. In some examples, neighboring nanowires can be formed sufficiently proximate one another such that their respective gate dielectric layers are either: (1) just in contact with one another (e.g., are contiguous); or (2) merged with one another to provide a single, continuous dielectric layer shared by the neighboring nanowires. In some cases, a given gate dielectric layer may be of a multi-layer configuration, having two or more constituent dielectric layers. Thus, in some examples, the gate dielectric layers of neighboring nanowires may be formed such that one or more constituent dielectric layers are either: (1) just in contact with one another (e.g., are contiguous); or (2) merged with one another to provide a single, continuous constituent dielectric layer shared by the neighboring nanowires.