Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16745456Application Date: 2020-01-17
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Publication No.: US10771057B1Publication Date: 2020-09-08
- Inventor: Akira Yoshioka , Toru Sugiyama , Masaaki Iwai , Naonori Hosokawa , Masaaki Onomura , Hung Hung , Yasuhiro Isobe
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Minato-ku JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Minato-ku JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5e613ef6
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H02M1/08 ; H03K17/06 ; H01L25/07 ; H02P27/06

Abstract:
A semiconductor device of embodiments includes a first normally-off transistor having a first electrode, a second electrode, and a first control electrode, a normally-on transistor having a third electrode electrically connected to the second electrode via a first wiring, a fourth electrode, and a second control electrode, a second normally-off transistor having a fifth electrode, a sixth electrode electrically connected to the third electrode via a second wiring, and a third control electrode, a first diode having a first anode electrically connected to the second control electrode and a first cathode electrically connected to the third electrode, and a capacitor having a first end portion connected to the first anode and the second control electrode and a second end portion.
Information query
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