Invention Grant
- Patent Title: GaN FET gate driver for self-oscillating converters
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Application No.: US16114718Application Date: 2018-08-28
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Publication No.: US10784794B2Publication Date: 2020-09-22
- Inventor: Michael A. de Rooij
- Applicant: Efficient Power Conversion Corporation
- Applicant Address: US CA El Segundo
- Assignee: Efficient Power Conversion Corporation
- Current Assignee: Efficient Power Conversion Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Blank Rome LLP
- Main IPC: H02M7/217
- IPC: H02M7/217 ; H02M1/088 ; H02M1/08

Abstract:
A power converter in which two power FETs are provided in a full bridge arrangement with two diodes for supplying a rectified voltage to a load. The gates of the power FETs receive alternating and opposite voltage waveforms such that the power FETs conduct oppositely to each other. A turn-off FET is connected to the gate of each power FET to prevent spurious turn on of the power FET during periods in which the opposite power FET is turned on. A voltage sense FET is also connected to the gate of each power FET to limit the gate voltage of the power FET. The voltage sense FETs are each synchronously modulated with the corresponding power FET to limit the gate to source voltage of the voltage sense FET when the corresponding turn-off FET is on and the corresponding power FET is off.
Public/Granted literature
- US20190068075A1 GaN FET GATE DRIVER FOR SELF-OSCILLATING CONVERTERS Public/Granted day:2019-02-28
Information query
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