Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16582272Application Date: 2019-09-25
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Publication No.: US10784856B2Publication Date: 2020-09-22
- Inventor: Mitsutaka Hano , Akihisa Yamamoto
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@40bf2082
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K17/687 ; G05F1/00 ; G05F3/02 ; H03K17/16 ; H01L29/78 ; H02M1/08 ; H01L29/40 ; H05B45/37

Abstract:
A semiconductor device includes a first drive circuit and a bootstrap control circuit. When a voltage VB is equal to or smaller than a power supply voltage VCC, the boost control circuit turns on a MOSFET by controlling a gate signal input to a gate terminal, and a back gate control circuit makes a voltage applied to a back gate terminal smaller than the voltage VB.
Public/Granted literature
- US20200169253A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-05-28
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