- Patent Title: Silicon carbide semiconductor device and power conversion apparatus
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Application No.: US16569508Application Date: 2019-09-12
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Publication No.: US10797169B2Publication Date: 2020-10-06
- Inventor: Kazuya Ishibashi , Atsushi Narazaki , Yasuhiro Kagawa , Kensuke Taguchi
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5af39c30
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/16 ; H01L29/417 ; H01L29/10 ; H01L29/08 ; H02M1/08 ; H01L29/45 ; H01L49/02 ; H02M7/5387
Abstract:
A drift layer contains first conductivity type impurities. A well region contains second conductivity type impurities. A source region is provided on the well region and contains the first conductivity type impurities. A well contact region is in contact with the well region, contains the second conductivity type impurities, and has an impurity concentration on the second surface higher than the impurity concentration on the second surface in the well region. A gate electrode is provided on a gate insulating film. A Schottky electrode is in contact with the drift layer. A source ohmic electrode is in contact with the source region. A resistor is in contact with the well contact region and has higher resistance per unit area than the source ohmic electrode.
Public/Granted literature
- US20200144409A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS Public/Granted day:2020-05-07
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