Invention Grant
- Patent Title: Light receiving device, method for fabricating light receiving device
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Application No.: US16026476Application Date: 2018-07-03
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Publication No.: US10823610B2Publication Date: 2020-11-03
- Inventor: Takamitsu Kitamura , Hideki Yagi
- Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Applicant Address: JP Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka
- Agency: Smith, Gambrell & Russell, LLP.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@575215ea
- Main IPC: G02B6/43
- IPC: G02B6/43 ; H01L31/105 ; G01J1/44 ; G01J1/42 ; H01L31/0232 ; H01L31/0304 ; H01L31/109 ; H01L31/18 ; H01L31/0352 ; G01J1/04 ; G01J1/02 ; G01J9/02 ; G02B6/12

Abstract:
A method for fabricating a light receiving device includes: preparing a first substrate product which includes a semiconductor region having a common semiconductor layer, a first semiconductor laminate for a photodiode, a second semiconductor laminate for a waveguide, and a butt-joint between the first semiconductor laminate and the second semiconductor laminate, the first laminate and the second semiconductor laminate being disposed on the common semiconductor layer; etching the first substrate product with a first mask to form a second substrate product having a photodiode mesa structure produced from the first semiconductor laminate and a preliminary mesa structure produced from the second semiconductor laminate; etching the second substrate product with the first mask and a second mask, formed on the photodiode mesa structure; to produce a waveguide mesa structure from the preliminary mesa structure, and the waveguide mesa structure having a height larger than that of the preliminary mesa structure.
Public/Granted literature
- US20190003884A1 LIGHT RECEIVING DEVICE, METHOD FOR FABRICATING LIGHT RECEIVING DEVICE Public/Granted day:2019-01-03
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